The Industry's Only 1Gb 3V NOR Flash Memory: MirrorBit® Technology Expands the Range of NOR Flash Memory

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Today’s rich, complex embedded applications require more memory than ever. To satisfy that demand, product designers are turning to Spansion, the world’s largest pure play provider of Flash memory solutions and a former joint venture of AMD and Fujitsu. Spansion is dedicated to enabling, storing and protecting code and data in embedded applications. Designers rely on Spansion® MirrorBit® NOR Flash memory to expand their code and data storage in networking, automotive, industrial, consumer electronics, gaming and mobile devices.

The company’s broad product line includes devices ranging from 1 megabit (Mb) to 1 gigabit (Gb), including the industry’s first single-chip 1Gb NOR Flash device. These single chip solutions enable customers to store and execute growing amounts of code and data, while reducing the cost, complexity and form factor of their end products. Moreover, Spansion offers a wide range of interfaces and rich feature sets designed to handle the unique needs and diversity of embedded applications.

 

The Only Single Chip 1Gb NOR Flash Memory

The Spansion 1Gb MirrorBit NOR GL Flash memory (S29GL01GP) is currently the only 3V, single chip NOR Flash memory device at this density on the market. Fabricated on 90nm process technology, the device offers a fast page access time of 25ns with a corresponding random access time of 110ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the 1Gb MirrorBit NOR GL device ideal for today’s embedded applications that require high density storage, fast performance and low power consumption.

 

Easy Migration

Moving to the 1Gb device can be a breeze if you are currently using Spansion Flash memory. The entire MirrorBit NOR GL Flash family (1Gb down to 16Mb) and our traditional floating-gate NOR families are available in a Universal Footprint featuring the same pin outs, addresses and command sets. Users can easily migrate from lower to higher density Flash memory without having to alter board layouts or software if you are using Spansion drivers or Flash File System.

The 1Gb device is also compatible in function, continuing support for 3V, single power supply, 8- or 16-bit operation, and accelerated programming by applying higher voltage to the WP#/ACC-pin during production.

 

High Performance, Secure Design

The 1Gb MirrorBit NOR GL device features sector sizes of 128kbyte, rather than 64kbyte, contributing to an overall increased system performance by offering (larger) 8 word/16 byte page read buffers. Devices also feature Advanced Sector Protection, which prevents unauthorized write and erase operations in any user-defined combination of sectors without the requirement to apply higher voltage to any pin. A Dynamic Protection Mode helps to avoid programming errors. Persistent Protection Bits can be set to lock down defined sectors defeating unauthorized software changes, as long as tuners or hackers have no access to the hardware. With Password Sector Protection even such hardware access will be unsuccessful, as long as the password is not known.

 

Low Voltage and Power Consumption

The 1Gb MirrorBit NOR GL device, along with the entire GL family, is also available with enhanced versatile I/O control (V_IO voltage 1.65-1.95V), meaning that the device generates and tolerates the voltage level that is asserted on the V_IO pin. In standby mode, current consumption is further lowered to 1uA. Devices with enhanced versatile I/O control are well suited to 1.8V environments like portable battery powered devices.

 

FEATURES Single 3V read/program/erase (2.7-3.6 V) Enhanced Versatile I/O™ control All input levels (address, control and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC 90nm MirrorBit process technology 8 word/16 byte page read buffer 32 word/64 byte write buffer reduces overall programming time for multiple-word updates Secured Silicon Sector region 128 word/256 byte sector for permanent, secure identification through an 8 word/16 byte random Electronic Serial Number Can be programmed and locked at the factory or by the customer Uniform 64Kword/128KByte Sector Architecture; S29GL01GP: One thousand twenty-four sectors 100,000 erase cycles per sector typical 20 year data retention typical Offered Packages 56-pin TSOP 64-ball Fortified BGA Suspend and Resume commands for Program and Erase operations Write operation status bits indicate Program and Erase operation completion Unlock Bypass Program command to reduce programming time Support for CFI (Common Flash Interface) Persistent and Password methods of Advanced Sector Protection WP#/ACC input Accelerates programming time (when VACC is applied) for greater throughput during system production Protects first or last sector regardless of sector protection settings Hardware reset input (RESET#) resets device Ready/Busy# output (RY/BY#) detects Program or Erase cycle completion

Specifications Device Architecture Density 1GB Voltage 3 Volts Interface Page-mode Process Technology 90nm MirrorBit™ Bus Width x8/x16 Sector Type Uniform Basic Ordering Options Initial Access Times (ns) 110 Page Mode Access Times (ns) 25/30 Package Options 56-pin TSOP 64-ball Fortified BGA Temperature Range -40°C to +85°C

 

 Application Notes

Name	Application Notes
Using the Operation Status Bits in AMD Devices
Understanding Page Mode Flash Memory Devices
MirrorBit® Flash Memory Write Buffer Programming and Page Buffer Read
Common Flash Interface Version 1.4 Vendor Specific Extensions

 

 

 Featured Products

Part Number		Description	Data Sheet	App. Notes
S29GL01GP11TFIR10		Page-mode, 3V, 1Gb, x8/x16, 110ns, Mirrorbit® Flash
S29GL01GP12FFI010		Page-mode, 3V, 1Gb, x8/x16, 120ns, Mirrorbit® Flash
S29GL01GP12TFI010		Page-mode, 3V, 1Gb, x8/x16, 120ns, Mirrorbit® Flash

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