Freescale Broadens General Purpose RF Amplifier Portfolio with Four New Devices

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Amplifiers offer high levels of performance and active biasing technology for a wide range of applications.

Freescale Semiconductor has unveiled four general purpose broadband RF amplifiers that deliver high gain and linearity over bandwidths as great as DC to 6GHz. The amplifiers are well suited for applications ranging from WiMAX base stations to meter readers, set top boxes, RFID readers and any application requiring a cost effective, small signal gain source.

The next generation indium gallium phosphide (InGaP) devices are Freescale’s first to feature active biasing technology. Active biasing reduces performance variation due to temperature and supply voltage variations and provides ease-of-use for system designers.

Freescale entered the general purpose amplifier (GPA) market in 2004 with a family of gallium arsenide (GaAs) devices designed to provide high levels of performance and reliability, along with dynamic supply capability and unparalleled deliverability for a wide array of applications. The company’s portfolio of general purpose amplifiers now comprises 17 distinct devices and includes heterojunction field effect transistors (HFETs) for greater ruggedness and higher linearity for the general purpose market.

“The addition of these devices strengthens our portfolio and allows designers to meet a greater variety of system and market requirements,” said Gavin P. Woods, vice president and general manager, RF Division, Freescale Semiconductor. “Customers using these amplifiers will benefit from Freescale’s worldwide technical support and our ability to deliver large volumes consistently.”

The third order output intercept points (IP3) for the devices range from 37dBm to 41dBm, providing the performance required for applications demanding low intermodulation distortion and wide dynamic range. All four are RoHS compliant and housed in cost effective plastic SOT-89 packages with a Moisture Sensitivity Level (MSL) rating of 1 at a 260°C peak package temperature.

The devices feature inherently low thermal resistance and low junction temperatures for higher reliability and longer operating life. They operate directly from a single 5V bias supply, eliminating the need for external resistors.

 

FEATURES Low thermal resistance Devices operate directly from 5V supply voltages and regulators – no external resistors are required Darlington InGaP HBT devices have patented integrated thermal compensation schemes that greatly reduces performance variation over temperature Internal source of GaAs transistors with a broad base of available GaAs technologies including InGaP HBT, Emode, PHEMT, EPI MESFET and HFET SOT-89 has MSL1 rating @ 260ºC package peak temperature Excellent reliability

APPLICATIONS Drivers or pre-drivers in base station applications and repeaters UMTS, PCS, UHF, VHF, WLL, PHS Buffer amplifiers in mixer applications FTT-P (Fiber to the Premise) applications both as laser drivers and as low cost small signal RF boosters at the premise CATV house amps, reverse amps, drop amps and set top boxes Wireless LAN systems based on the IEEE 802.11a, b and g variants WiMAX IEEE 802.16 TV and DTV broadcast ZigBee® wireless networks Emergency radio systems and military SDR applications ISM (Industrial, Scientific and Medical) RFID (Radio Frequency Identification)

 

 

The Four New Devices Are

MMH3111N

The MMH3111N is a general purpose amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 250 to 3000MHz such as cellular, PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small signal RF.

 

FEATURES GaAs HFET 250MHz to 3GHz 21.5dBm P1dB output power and 11.5dB gain at 2140MHz Third order output intercept point: 40.5dBm @ 900MHz Single 5V supply Internally matched to 50Ω Low cost SOT-89 surface mount package RoHS-compliant

 

 

 

MMG3014N

The MMG3014N is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 4000MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small signal RF.

 

FEATURES InGaP HBT DC to 4GHz 24dBm P1dB output power and 20dB gain at 900MHz P1dB: 24dBm @ 900MHz Third order output intercept point: 40.5dBm @ 900MHz Single voltage supply Internally matched to 50Ω Low cost SOT-89 surface mount package RoHS-compliant

 

 

 

MMG3015N

The MMG3015N is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small signal RF.

 

FEATURES InGaP HBT DC to 6GHz 21dBm P1dB output power and 15.5dB dBm gain at 900MHz Third order output intercept point: 37dBm @ 900MHz Single 5V supply Internally matched to 50Ω Low cost SOT-89 surface mount package RoHS-compliant

 

 

 

MMG3016N

The MMG3016N is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 4000MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small signal RF.

 

FEATURES InGaP HBT DC to 4GHz 24 P1dB dBm output power and 15 dB of gain at 900MHz Third order output intercept point: 40.5dBm @ 900MHz Single 5V supply Internally matched to 50Ω Low cost SOT-89 surface mount package RoHS-compliant

 

 

MMG3014N will be available August 2007

MMG3016N will be available August 2007

 

 

 Featured Products

Part Number		Description	Data Sheet	App. Notes
MMG3014N		Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
MMG3015N		Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
MMG3016N		Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
MMH3111N		Heterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier

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