Freescale Aims to Set New Standard in RF Power Performance for Industrial, Scientific and Medical (ISM) Applications

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Market leader in RF Power for cellular infrastructure expands its solutions into the ISM market with six advanced devices.

Using newly developed high voltage RF Power technology, combined with innovative and cost effective over molded plastic packaging, Freescale Semiconductor has expanded into the industrial, scientific and medical (ISM) market. A leader in the demanding cellular infrastructure market, Freescale is extending its technology and packaging leadership into the ISM market with transistors designed for the HF/VHF frequency space (10-450MHz), in addition to the existing 28V LDMOS 2.45GHz products.

This expansion was spawned by the development of 50V VHV6 RF LDMOS technology (very high voltage sixth generation RF laterally diffused metal oxide semiconductor), a 50V enhancement to Freescale’s widely accepted 28V LDMOS technology. The increase to a 50V supply voltage in LDMOS technology allows the designer to achieve higher power levels and to attain performance levels that exceed those available in the ISM marketplace today. In addition, availability of devices in over molded plastic packaging allows for the most cost effective ISM solutions available.

“Freescale’s market leadership in RF Power for cellular infrastructure, combined with the development of 50V LDMOS technology, puts us in a unique position to expand into the ISM space with truly innovative products,” said Gavin P. Woods, vice president and general manager of Freescale’s RF Division. “Additionally, our leadership in over molded plastic packaging will allow customers to develop the most cost effective solutions available for ISM applications, such as plasma generators and MRI (magnetic resonance imaging) systems.”

 

Raising the Bar in Performance

The flagship of Freescale’s ISM product offering is the MRF6V2300N. With its high level of performance, it allows ISM system designers to eliminate gain stages, and thus reduce overall system cost and decrease board area. In addition to best-inclass performance, the device is extremely stable with a ruggedness tolerance of 10:1 VSWR.

 

FEATURES Highest gain features in the industry – up to 25.5dB Fewer gain stages needed in design saving cost and board space Highest efficiency in the industry – 68% at CW P1dB Available in a wide frequency range – up to 450MHz Cost effective, over molded plastic packaging Integrated ESD protection

APPLICATIONS Plasma generators Laser exciters RF heating and lighting Magnetic Resonance Imaging (MRI) FM/VHF broadcast

Six Innovative Products for ISM

 

MRF6V2010N

The MRF6V2010N and MRF6V2010NB are designed primarily for pulsed wideband large-signal output and driver applications with frequencies up to 450MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

 

FEATURES Typical CW performance at 220MHz: VDD = 50V, IDO = 35mA, Pout = 10W Power gain: 25dB Drain efficiency: 64% Capable of handling 10:1 VSWR, @ 50V DC, 220MHz, 10Ws CW output power Integrated ESD protection Excellent thermal stability Facilitates manual gain control, ALC and modulation techniques 225°C capable plastic package RoHS-compliant

 

MRF6V2150N

The MRF6V2150N and MRF6V2150NB are designed primarily for wideband large-signal output and driver applications with frequencies up to 450MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

 

FEATURES Typical CW performance at 220MHz: VDD = 50V, IDO = 450mA, Pout = 150W Power gain: 25.5dB Drain efficiency: 68% Capable of handling 10:1 VSWR, @ 50V DC, 220MHz, 150W output power Integrated ESD protection Excellent thermal stability Facilitates manual gain control, ALC and modulation techniques 225°C capable plastic package RoHS-compliant

 

MRF6V2300N

The MRF6V2300NR1 and MRF6V2300NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 450MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

 

FEATURES Typical CW performance at 220MHz: VDD = 50V, IDO = 900mA, Pout = 300W Power gain: 25.5dB Drain efficiency: 68% Capable of handling 10:1 VSWR, @ 50V DC, 220MHz, 300W CW output power Integrated ESD protection Excellent thermal stability Facilitates manual gain control, ALC and modulation techniques 200°C capable plastic package RoHS-compliant

 

MW6IC2420NB

The MW6IC2420NBR1 integrated circuit is designed with on-chip matching that makes it usable at 2450MHz. This multi-stage structure is rated for 26 to 32V operation and covers all typical industrial, scientific and medical modulation formats.

 

FEATURES Driver Application Typical CW performance at 2450MHz: VDD = 28V, IDO1 = 300mA, IDO2 = 320mA, Pout = 10W Power gain: 21.5dB Efficiency: 21% Capable of handling 3:1 VSWR, @ 28V DC, 2170MHz, 20W CW output power Characterized with series equivalent large signal impedance parameters and common source scattering parameters On-chip matching (50Ω input, DC blocked, >3Ω output) Integrated quiescent current temperature compensation with Enable/Disable function Integrated ESD protection 200°C capable plastic package RoHS-compliant

 

MRF6S24140H

The MRF6S24140HR3 and MRF6S24140HSR3 are designed primarily for large-signal output applications at 2450MHz. Devices are suitable for use in industrial, medical and scientific applications.

 

FEATURES Typical CW performance at 2450MHz: VDD = 28V, IDO = 1200mA, Pout = 140W Power gain: 13.2dB Drain efficiency: 45% Capable of handling 10:1 VSWR, @ 28V DC, 2390MHz, 140W CW output power Characterized with series equivalent large signal impedance parameters Internally matched for ease of use Qualified up to a maximum of 32 VDD operation Integrated ESD protection Lower thermal resistance package Designed for lower memory effects and wide instantaneous bandwidth applications Low gold plating thickness on leads, 40µ" nominal RoHS-compliant

 

A brief summary can be downloaded here.

For more information, go to www.freescale.com/rflinear.

 

 

 Featured Products

Part Number		Description	Data Sheet	App. Notes
MRF6P24190HR5		2450MHz, 190W, 28V CW, Lateral N-Channel RF Power MOSFET
MRF6S24140HR5		2450MHz, 140W, 2 V CW Lateral N-Channel RF Power MOSFET
MRF6V2010NR1		10-450MHz, 10W, 50V Lateral N-Channel Broadband RF Power MOSFET
MW6IC2420NBR1		2450MHz, 20W, 28V CW RF LDMOS Integrated Power Amplifier
PRF6V2150NR1		10-450MHz, 150W, 50V Lateral N-Channel Single-Ended Broadband RF Power MOSFET
PRF6V2300NBR1		RF Power Field Effect Transistor 10-450MHz, 300W, 50V, N-Channel Enhancement-Mode Lateral MOSFET

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