MOSFETs Suit Ultra Low Gate Drive Operation

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Zetex Semiconductors has introduced three new N-Channel enhancement mode MOSFETs, developed specifically for applications with limited drive voltage availability.

The 20V ZXMN2B03E6 (SOT236), ZXMN2B14FH and ZXMN2B01F (both SOT23) are capable of low loss switching at a VGS of 1.8V, enabling them to be operated from two 1.2V cells or a single Li-Ion cell. Their ultra low gate drive also means they can be driven directly by logic gates.

R_DS(ON) for the three MOSFETs is respectively guaranteed to be less than 75MΩ, 100MΩ and 200MΩ at 1.8VGS and 40MΩ, 55MΩ and 100MΩ at 4.5VGS. This makes them ideal for low voltage roles including level shifting for high side disconnect switches, external switching for boost converter circuits and buffering low voltage microcontrollers and loads such as motors and solenoids.

Fast switching performance is another key feature of the company’s proprietary UMOS technology. For example, the ZXMN2B01F rise and fall times are just 3.6ns and 10.5ns, for VGS= 4.5V and ID=1A.

 

FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive

APPLICATIONS DC-DC conversion Power management functions Disconnect switches (ZXMN2B03E6 and ZXMN2B14FH) Motor control

 

 

 

 

 Featured Products

Part Number		Description	Data Sheet	App. Notes
ZXMN2B01FTA		20V SOT23 N-Channel Enhancement Mode MOSFET with Low Gate Drive Capability
ZXMN2B03E6TA		20V SOT23-6 N-Channel Enhancement Mode MOSFET with Low Gate Drive Capability
ZXMN2B14FHTA		20V SOT23 N-Channel Enhancement Mode MOSFET with Low Gate Drive Capability

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