SiGeC RF Transistor

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A perfect match up to 20GHz.

Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave NPN transistor, the BFU725F, design engineers get high switching frequencies plus extremely high gain and low noise. All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 20GHz.

The NPN microwave transistor BFU725F delivers an unbeatable blend of high switching frequency, high gain and very low noise. Thanks to its ultra-low noise figure, it’s perfect for your sensitive RF receivers, particularly those for high-performance cell phones. Alternatively, with its high cut-off frequency, it’s the ideal solution for microwave applications in the 10GHz to 30GHz range, such as satellite TV receivers and automotive collision avoidance radar.

The BFU725F get its outstanding performance from NXP’s innovative silicon-germanium-carbon (SiGeC) BiCMOS process. QUBiC4X was designed specifically to meet the needs of real-life, high frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process.

In addition, with the BFU725F, design engineers will not need a biasing IC or negative biasing voltage. So it’s a much more cost-effective solution than GaAs pHEMT devices.

 

FEATURES Very low noise (0.4dB at 1.8GHz / 0.67dB at 5.8GHz) High maximum stable gain Gms (27.8dB at 1.8GHz / 10dB at 18GHz) High switching frequency (fT >100GHz / fMAX >150GHz) Plastic surface mount SOT343F package   BENEFITS SiGeC process delivers high switching frequency from a silicon-based device Cost-effective alternative to GaAs devices RoHS-compliant

APPLICATIONS GPS systems DECT phones Low noise amplifier (LNA) for microwave communications systems 2nd stage LNA and mixer in direct broadcast satellite (DBS) low noise blocks (LNBs) Satellite radios WLAN and CDMA applications Low noise microwave application

 

 

 

Figure 1: Gain as a function of frequency (typical values)

Figure 2: Transition frequency as a function of collector current (typical values)

 

 

 Featured Products

Part Number		Description	Data Sheet	App. Notes
BFU725F T/R		SiGe: C Transistor for High Frequency Applications

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