Introducing Cypress’s non-volatile random access memory (nvSRAM) that integrates Quantum Trap™ non-volatile elements into high performance SRAM memory cells. The memory array is accessed identically to conventional SRAM. These are the first products in a family of Cypress non-volatile SRAMs that internally store data when power is lost, with no battery required.
Competing Technologies
F-RAM: Based on a cell that uses capacitors built
with a thin ferroelectric film. The direction of the
electric field stores the data.
BBSRAM: Uses a battery to back-up the primary
voltage source. Whenever the main power source
is lost, the battery is switched in to supply power
to the SRAM.
MRAM: Uses a magnetic tunnel junction (MTJ)
element to store data. Recently introduced to the
market and remains an immature, sole-sourced
technology
FEATURES
Reliable non-volatile storage without battery
Unlimited read, write and recall cycles
200,000 store cycles to non-volatile elements
20 years’ data retention with better than 5 FIT’s reliability
Automatic write protect
Directly replaces SRAM, battery-backed SRAM, EPROM or EEPROM
SRAM pin-outs and timings
BENEFITS
RoHS-compliant
No batteries or contacts to fail
No data loss from electrical noise or undershoot
Faster read/write capability
Smaller footprint than competing technologies
No socketing or secondary manufacturing steps required
No power monitoring required
Eliminates EEPROM limitations
Symmetrical read/write accesses to 15ns
Can store full array on power-down using zero system time
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