Retain Data without a Battery with 2Mb Serial F-RAM Memory

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FM25H20 replaces Flash in systems that require fast writes, low power and small footprint.

The FM25H20 is the semiconductor industry’s first 2-megabit (Mb) serial F-RAM memory with a high speed serial peripheral interface (SPI). The 3V, 2Mb serial F-RAM provides greater data collection capacity in a tiny TDFN package to reduce costs and board space in a range of advanced applications.

Manufactured on an advanced 130 nanometer CMOS process, the FM25H20 high-density nonvolatile F-RAM memory is an ideal replacement for serial Flash in sophisticated electronic systems that require low power and minimal board space. These include portable medical devices such as hearing aids, which are essentially mini data processors with limited space and low power budgets.

F-RAM benefits over Flash

• Lower operating currents
• Faster writes
• Greater write endurance

 

About the Advanced 130 Nanometer Process

The FM25H20 is based on Texas Instruments’ proven 130 nanometer (nm) CMOS manufacturing process. Only two additional mask steps have been used to embed the nonvolatile F-RAM module within the standard CMOS 130nm logic process.

 

FEATURES 2Mb F-RAM: Organized as a 256K x 8 bit nonvolatile memory Tiny package: 8-lead TDFN (5.0 x 6.0mm) Writes at maximum bus speed: Optimized by industry-standard, 40MHz SPI Virtually unlimited endurance: 100 trillion read/writes Low power: Draws 10 milliamps for reads/writes, 80 microamps (typ.) in standby, 3 microamps (typ.) in ultra-low-current sleep mode Hardware and software write protection: Prevents inadvertent writes and data corruption

APPLICATIONS Meters Printers Portable medical devices

 

 

 Featured Products

Part Number		Description	Data Sheet	App. Notes
FM25H20-DG		2Mb Serial SPI 3V F-RAM Memory

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