Previous Page   Next Page

 

25V DirectFET® Chipset Optimized for High Frequency, High Efficiency DC-to-DC Applications


Page Contents:   [ Featured Products | Datasheets | Application Notes | Buy Now ]


See it First - Buy it First


This new 25V chipset combines IR’s latest generation HEXFET® MOSFET silicon and benchmark DirectFET packaging technology to deliver a high density, single control and single synchronous MOSFET solution in the footprint of an SO-8 and with slim 0.7mm profile. The new IRF6710S2, IRF6795M and IRF6797M devices are characterized with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase.

"The IRF6710S2 control MOSFET features ultra-low Rg and charge, and, when co-designed with the IRF6795M and IRF6797M synchronous MOSFETs which include integrated Schottky, provides a solution for high frequency, high efficiency DC-to-DC converters that delivers excellent performance over the entire load range," said Vijay Viswanathan, IR’s product marketing engineer for Enterprise Power Products.

The IRF6710S2 is ideally suited as a control MOSFET due to the device’s very low gate resistance of 0.3Ω and very low Miller charge (Qgd) of 3.0 nC which significantly reduces switching losses.

The IRF6795M and IRF6797M feature extremely low RDS(on) to significantly reduce conduction losses, while the integrated Schottky reduces diode conduction losses and reverse recovery losses, making these devices well suited for high current synchronous MOSFET circuits. The IRF6795M and IRF6797M have a common MX footprint to allow easy migration from existing SyncFET devices.

 

FEATURES
  • RoHS-compliant containing no lead and bromide
  • Integrated monolithic Schottky diode
  • Low profile (<0.7mm)
  • Dual sided cooling compatible
  • Ultra low package inductance
  • Optimized for high frequency switching
  • Ideal for CPU core DC-to-DC converters
  • Optimized for control FET Application
  • Low conduction and switching losses
  • Compatible with existing surface mount techniques
  • 100% Rg tested
APPLICATIONS
  • Point-of-load (POL) converter designs
  • Servers
  • High-end desktop and notebook computer applications

 


 

 


 

 Featured Products
Part Number   Description Data
Sheet
App.
Notes
 
IRF6710S2TR1PBF New Product Introduction 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 Package Rated at 12A Optimized with Low-on Resistance View PDF   Buy Now
IRF6795MTR1PBF New Product Introduction 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX Package Rated at 32A Optimized with Low-on Resistance View PDF   Buy Now
IRF6797MTR1PBF New Product Introduction 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX Package Rated at 36A Optimized with Low-on Resistance View PDF   Buy Now

refers to New Product Introduction

 

Previous Page
Terms of Use  |  Privacy Policy
© 2012 Future Electronics. All rights reserved.

Next Page